Sub-5nm Technology Demo
Advanced demonstrations for sub-5nm technology nodes including high-k dielectrics, metal gates, and 3D structures
Sub-5nm Technology Capabilities
High-k Dielectrics
HfO₂ and ZrO₂ with k > 25 for equivalent oxide thickness < 1nm while maintaining low leakage current.
Metal Gate Integration
Work function tuning with TiN, TaN, and TiAlN for precise threshold voltage control.
3D FinFET Structures
Conformal ALD coating on high aspect ratio fin structures with >99% step coverage.
Spacer Technology
Ultra-thin nitride and oxide spacers for gate length scaling and parasitic reduction.
Sub-5nm Performance Metrics
0.8 nm
EOT (Equivalent Oxide Thickness)
±0.2%
Thickness Uniformity
99.5%
Step Coverage
1.5 Å
Surface Roughness
Technology Controls
10:1