Device Physics - Nonlinear Photonics Suite

Device Parameters

Bias Voltage (V)

1000 V

Waveguide Width (nm)

1200 nm

Waveguide Height (nm)

400 nm

Photoconductive Layer (nm)

200 nm

Device Cross-Section

Electric Field Distribution

Optical Mode Profile (1550 nm)

SHG Mode Profile (775 nm)

E-field Strength

5.0 MV/m

χ⁽²⁾ Induced

0.47 pm/V

Mode Overlap

85%

n_eff (ω)

1.89

n_eff (2ω)

1.95

χ⁽³⁾ to χ⁽²⁾ Conversion Mechanism

Dispersion Curves

Material Stack Properties

SiN χ⁽³⁾ 2.5 × 10⁻¹⁹ m²/V²

SiN n₀ @ 1550nm 1.996

Si-rich SiN σ (dark) 10⁻¹⁰ S/m

Si-rich SiN σ (illuminated) 10⁻⁴ S/m

SiO₂ n₀ 1.444

Fundamental Physics

Electric-Field Induced χ⁽²⁾

DC electric field breaks centrosymmetry in χ⁽³⁾ materials:

χ⁽²⁾_eff = 3χ⁽³⁾E_DC

Nonlinear Polarization

Second-order nonlinear polarization drives SHG:

P_2ω = ε₀χ⁽²⁾E_ω²

Coupled Wave Equations

SHG dynamics governed by:

dA_2ω/dz = iκA_ω²e^iΔkz

Phase Mismatch

Wavevector mismatch determines coherence:

Δk = k_2ω - 2k_ω = 2π(n_2ω/λ_2ω - n_ω/λ_ω)

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