Comprehensive Materials Database
Complete reference for 50+ CVD/PVD materials including precursors, process conditions, film properties, and applications
Precursor/Source:
TEOS + O₂
Process Conditions:
PECVD: 300-400°C, 0.5-2 Torr
Film Properties:
Density:
2.2 g/cm³
Refr. Index:
1.46
Bandgap:
8.9 eV
Dielectric:
3.9
Stress:
-100 to -300 MPa
Dep. Rate:
50-200 nm/min
Applications:
- Interlayer dielectric
- Passivation
- MEMS
- Optical coatings
Precursor/Source:
TDMAH + H₂O
Process Conditions:
ALD: 200-350°C, 0.1-1 Torr
Film Properties:
Density:
9.7 g/cm³
Refr. Index:
2.1
Bandgap:
5.8 eV
Dielectric:
25
EOT:
0.5-1.5 nm
Leakage:
<1 A/cm² @ 1V
Applications:
- High-k gate dielectric
- DRAM capacitor
- Resistive RAM
- Advanced transistors
Precursor/Source:
TMA + H₂O
Process Conditions:
ALD: 150-300°C, 0.5 Torr
Film Properties:
Density:
3.0 g/cm³
Refr. Index:
1.65
Bandgap:
6.5 eV
Dielectric:
9
Hardness:
15 GPa
Thermal Cond:
30 W/m·K
Applications:
- Diffusion barrier
- Protective coatings
- Passivation
- Gate dielectric
Precursor/Source:
TDMAZ + H₂O
Process Conditions:
ALD: 200-300°C
Film Properties:
Density:
5.7 g/cm³
Refr. Index:
2.2
Dielectric:
25
Bandgap:
5.5 eV
Applications:
- High-k dielectric
- Optical coatings
- RRAM
Precursor/Source:
Ta(OEt)₅ + O₂
Process Conditions:
CVD: 400-600°C
Film Properties:
Density:
8.2 g/cm³
Refr. Index:
2.1
Dielectric:
26
Bandgap:
4.5 eV
Applications:
- DRAM capacitor
- High-k gate
- Optical films
Precursor/Source:
TTIP + O₂
Process Conditions:
PECVD/ALD: 200-500°C
Film Properties:
Density:
3.8-4.2 g/cm³
Refr. Index:
2.4-2.7
Bandgap:
3.0-3.2 eV
Dielectric:
80-100
Applications:
- AR coating
- Photocatalysis
- DRAM
- Solar cells
Precursor/Source:
Y(TMHD)₃ + O₂
Process Conditions:
ALD: 250-350°C
Film Properties:
Density:
5.0 g/cm³
Dielectric:
15
Bandgap:
5.6 eV
Applications:
- High-k dielectric
- Phosphor
- Buffer layer
Precursor/Source:
La(TMHD)₃ + O₂/H₂O
Process Conditions:
ALD: 200-300°C
Film Properties:
Dielectric:
27
Bandgap:
5.5 eV
Precursor/Source:
Ge precursor + O₂
Process Conditions:
CVD: 400-600°C
Film Properties:
Refr. Index:
1.6
Bandgap:
5.6 eV
Dielectric:
6
Applications:
- Optical waveguides
- Passivation
Precursor/Source:
SnCl₄ + O₂
Process Conditions:
CVD: 400-600°C
Film Properties:
Resistivity:
10⁻⁴ Ω·cm
Bandgap:
3.6 eV
Transparency:
>80%
Applications:
- Transparent conductor
- Gas sensors
Precursor/Source:
In(acac)₃ + O₂
Process Conditions:
CVD: 300-500°C
Film Properties:
Resistivity:
10⁻⁴ Ω·cm
Transparency:
>85%
Precursor/Source:
DEZ + H₂O
Process Conditions:
ALD: 100-200°C
Film Properties:
Bandgap:
3.3 eV
Resistivity:
10⁻³ Ω·cm
Piezoelectric:
Yes
Applications:
- TCO
- Piezoelectric
- UV sensors
Precursor/Source:
Mg(THD)₂ + O₂
Process Conditions:
ALD: 200-400°C
Film Properties:
Dielectric:
9.8
Lattice:
4.21 Å
Precursor/Source:
Nb(OEt)₅ + O₂
Process Conditions:
CVD: 400-600°C
Film Properties:
Refr. Index:
2.3
Dielectric:
40
Applications:
- Optical coatings
- Capacitors
Precursor/Source:
WF₆ + O₂
Process Conditions:
CVD: 300-500°C
Film Properties:
Bandgap:
2.7 eV
Electrochromic:
Yes
Applications:
- Smart windows
- Gas sensors
Precursor/Source:
SiH₄ + NH₃
Process Conditions:
LPCVD: 700-850°C, 0.1-0.5 Torr
Film Properties:
Density:
2.9-3.1 g/cm³
Refr. Index:
2.0-2.1
Bandgap:
5.0 eV
Stress:
+1000 MPa (LPCVD)
Etch Selectivity:
100:1 vs SiO₂ in HF
Applications:
- Spacer
- Etch stop
- Passivation
- MEMS membranes
- Hard mask
Precursor/Source:
TiCl₄ + NH₃
Process Conditions:
CVD: 400-600°C
Film Properties:
Resistivity:
20-50 μΩ·cm
Color:
Gold
Hardness:
20 GPa
Melting Pt:
2950°C
Work Function:
4.6 eV
Applications:
- Diffusion barrier
- Gate electrode
- Hard coating
- Decorative
Precursor/Source:
TaCl₅ + NH₃
Process Conditions:
CVD/PVD: 300-600°C
Film Properties:
Resistivity:
200-500 μΩ·cm
Density:
13-14 g/cm³
Applications:
- Cu barrier
- Gate electrode
- Resistor
Precursor/Source:
TMA + NH₃
Process Conditions:
MOCVD: 1000-1200°C
Film Properties:
Bandgap:
6.2 eV
Thermal Cond:
285 W/m·K
Piezoelectric:
Strong
Applications:
- RF filters
- LED
- Thermal management
Precursor/Source:
B₂H₆ + NH₃
Process Conditions:
PECVD: 300-600°C
Film Properties:
Dielectric:
4-5
Thermal Cond:
200-400 W/m·K
Hardness:
30-40 GPa
Applications:
- 2D materials
- Dielectric
- Protective
Precursor/Source:
TMGa + NH₃
Process Conditions:
MOCVD: 1000-1100°C
Film Properties:
Bandgap:
3.4 eV
Mobility:
1000 cm²/V·s
Breakdown:
3.3 MV/cm
Applications:
- LED
- Power electronics
- RF devices
Precursor/Source:
WF₆ + NH₃
Process Conditions:
CVD: 300-500°C
Film Properties:
Resistivity:
200-400 μΩ·cm
Barrier:
Excellent
Precursor/Source:
ZrCl₄ + NH₃
Process Conditions:
CVD: 400-600°C
Film Properties:
Hardness:
15-20 GPa
Color:
Gold
Precursor/Source:
HfCl₄ + NH₃
Process Conditions:
CVD: 400-600°C
Film Properties:
Resistivity:
30-50 μΩ·cm
Work Function:
4.8 eV
Precursor/Source:
CrCl₃ + NH₃
Process Conditions:
CVD: 400-700°C
Film Properties:
Hardness:
18 GPa
Friction:
Low
Applications:
- Wear resistance
- Cutting tools
Precursor/Source:
Cu precursor
Process Conditions:
PVD/CVD: 200-400°C
Film Properties:
Resistivity:
1.7 μΩ·cm (bulk)
Melting Pt:
1085°C
Electromig:
MA/cm²
CTE:
16.5 ppm/K
Applications:
- Interconnects
- Electrodes
- Seed layer
Precursor/Source:
Al target
Process Conditions:
PVD: RT-400°C
Film Properties:
Resistivity:
2.7 μΩ·cm
Density:
2.70 g/cm³
Reflectivity:
92%
CTE:
23.1 ppm/K
Applications:
- Interconnects
- Mirrors
- Bond pads
Precursor/Source:
WF₆ + H₂
Process Conditions:
CVD: 300-450°C
Film Properties:
Resistivity:
5.6 μΩ·cm
Melting Pt:
3422°C
Step Coverage:
>95%
Selectivity:
Si/SiO₂
Applications:
- Plug fill
- Local interconnect
- Contact
Precursor/Source:
Ti target
Process Conditions:
PVD: RT-400°C
Film Properties:
Resistivity:
42 μΩ·cm
Adhesion:
Excellent
Work Function:
4.3 eV
Precursor/Source:
Ta target
Process Conditions:
PVD: RT-400°C
Film Properties:
Resistivity:
13 μΩ·cm
Melting Pt:
3017°C
Precursor/Source:
Pt target
Process Conditions:
PVD: RT-400°C
Film Properties:
Resistivity:
10.6 μΩ·cm
Stability:
Excellent
Precursor/Source:
Au target
Process Conditions:
PVD: RT-300°C
Film Properties:
Resistivity:
2.2 μΩ·cm
Reflectivity:
98%
Applications:
- Bond pads
- Optics
- Contacts
Precursor/Source:
Ag target
Process Conditions:
PVD: RT-300°C
Film Properties:
Resistivity:
1.6 μΩ·cm
Reflectivity:
99%
Precursor/Source:
Ni target
Process Conditions:
PVD: RT-400°C
Film Properties:
Resistivity:
6.9 μΩ·cm
Magnetic:
Yes
Precursor/Source:
Co target/Co₂(CO)₈
Process Conditions:
PVD/CVD: 150-400°C
Film Properties:
Resistivity:
6.2 μΩ·cm
Magnetic:
Yes
Applications:
- Contacts
- Magnetic storage
Precursor/Source:
Ru₃(CO)₁₂
Process Conditions:
CVD: 200-350°C
Film Properties:
Resistivity:
7.1 μΩ·cm
Barrier:
Good
Precursor/Source:
Mo target
Process Conditions:
PVD: RT-500°C
Film Properties:
Resistivity:
5.2 μΩ·cm
Melting Pt:
2623°C
Applications:
- Gate
- Heaters
- Back contact
Process Conditions:
LPCVD: 550-650°C, 0.2-0.5 Torr
Film Properties:
Resistivity:
0.001-1000 Ω·cm
Grain Size:
50-500 nm
Texture:
(110) preferred
Dep. Rate:
5-20 nm/min
Applications:
- Gate
- Resistor
- TFT
- Solar cells
Process Conditions:
PECVD: 200-350°C
Film Properties:
Bandgap:
1.6-1.8 eV
H content:
5-15%
Density:
2.0-2.3 g/cm³
Applications:
- TFT
- Solar cells
- Photodetectors
Process Conditions:
CVD: 300-600°C
Film Properties:
Bandgap:
0.66 eV
Mobility:
3900 cm²/V·s
Lattice:
5.658 Å
Applications:
- High mobility channel
- Photodetectors
Precursor/Source:
SiH₄ + GeH₄
Process Conditions:
CVD: 400-700°C
Film Properties:
Bandgap:
0.66-1.1 eV
Lattice:
Tunable
Mobility:
High
Precursor/Source:
SiH₄ + C₃H₈
Process Conditions:
CVD: 1200-1600°C
Film Properties:
Bandgap:
3.2 eV
Breakdown:
3 MV/cm
Thermal Cond:
490 W/m·K
Applications:
- Power devices
- High temp
- LED
Precursor/Source:
TMGa + AsH₃
Process Conditions:
MOCVD: 600-750°C
Film Properties:
Bandgap:
1.42 eV
Mobility:
8500 cm²/V·s
Direct gap:
Yes
Applications:
- RF devices
- Solar cells
- LED
Precursor/Source:
TMIn + PH₃
Process Conditions:
MOCVD: 600-700°C
Film Properties:
Bandgap:
1.34 eV
Mobility:
4600 cm²/V·s
Precursor/Source:
TMIn + TMGa + AsH₃
Process Conditions:
MOCVD: 600-700°C
Film Properties:
Bandgap:
0.35-1.4 eV
Lattice:
Tunable
Applications:
- Photodetectors
- Solar cells
Precursor/Source:
CH₄ + H₂
Process Conditions:
PECVD: 700-900°C
Film Properties:
Hardness:
100 GPa
Thermal Cond:
2200 W/m·K
Bandgap:
5.5 eV
Applications:
- Cutting tools
- Heat spreaders
- Electronics
Process Conditions:
PECVD: RT-400°C
Film Properties:
Hardness:
20-80 GPa
Friction:
0.05-0.1
sp³:
30-80%
Applications:
- Wear resistance
- Biomedical
Precursor/Source:
CH₄ + H₂
Process Conditions:
CVD: 1000°C
Film Properties:
Mobility:
200000 cm²/V·s
Transparency:
97.7%
Conductivity:
High
Applications:
- Transparent conductor
- Sensors
- Electronics
Precursor/Source:
In/Ga/Zn targets + O₂
Process Conditions:
PVD: RT-300°C
Film Properties:
Mobility:
10-50 cm²/V·s
Transparency:
>80%
Stability:
Good
Precursor/Source:
In₂O₃ + SnO₂
Process Conditions:
PVD: 200-400°C
Film Properties:
Resistivity:
10⁻⁴ Ω·cm
Transparency:
>80%
Precursor/Source:
SiH₄ + N₂O + NH₃
Process Conditions:
PECVD: 300-400°C
Film Properties:
Refr. Index:
1.46-2.0 (tunable)
Composition:
Variable
Precursor/Source:
SiH₄ + CH₄ + NH₃
Process Conditions:
PECVD: 300-600°C
Film Properties:
Dielectric:
4-6
Hardness:
15-25 GPa
Barrier:
Excellent
Applications:
- Cu barrier
- Hard mask
- Etch stop