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Multi-Patterning Lithography Simulator
LELE / SADP / SAQP Process Physics & Pattern Analysis
Process Type:
LELE
Mask Pitch (nm):
160
Overlay Error (nm):
2.0
CD Error (nm):
3.0
Line Height (nm):
120
Spacer Thickness (nm):
20
Stitching Error (nm):
1.5
Number of Patterns:
20
80.0
Final Pitch (nm)
2
Number of Masks
40.0
Overlay Budget (nm)
2.5
EPE (nm)
Low
Collapse Risk
3D Layer Stack Visualization
Process Flow Diagram
Pitch Division Analysis
Overlay Budget Analysis
EPE Distribution
Aspect Ratio vs Pitch
Stitching Error Impact
Line-Space Ratio Analysis
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