End-to-End Lithography Simulator

Hopkins Partially Coherent Imaging → Dill ABC Resist Model → PEB Acid Diffusion → Development Simulation

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Final CD (nm)
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Sidewall Angle (°)
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NILS
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DOF (nm)
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Exposure Latitude (%)

Simulation Parameters

Hopkins: I(x,y) = ∫∫ TCC(fx,fy; fx',fy') M(fx,fy) M*(fx',fy') exp[i2π(fx-fx')x] dfx dfy
Dill: dM/dz = -A·M, dI/dz = -(A·M + B·(1-M))·I, C_acid = C0(1 - exp(-B·E))
PEB: ∂C/∂t = D·∇²C (Fick diffusion), Development: R = Rmax / (1 + exp[(Tsol - C)/β])

3D Resist Profile Visualization

1. Mask Pattern (Binary)
2. Pupil Function (Coherence)
3. Aerial Image Intensity (2D)
4. Latent Acid Image (PEB)
5. Resist Profile Cross-Section
6. Dose-Focus Process Window
7. NILS vs Pitch Analysis