Plasma Etching API Reference

1. initializeReactor()

Initializes a new plasma reactor instance with specified configuration parameters. This is the primary entry point for creating reactor simulations.

Parameters

ReactorConfig config = {
    chamber_volume: 50.0,  // liters
    electrode_area: 0.12,  // m^2
    gap: 0.025,            // m
    type: "ICP"
};

GasSystem gases = createGasSystem(["CF4", "O2", "Ar"]);
VacuumSystem vacuum = createVacuumSystem(500.0);  // L/s

PlasmaReactor reactor = initializeReactor(config, gases, vacuum);
                        

2. setProcessParameters()

Configures the operational parameters for plasma etching including RF power, pressure, gas flows, and temperature.

Parameters

ProcessParams params = {
    source_power: 1500.0,     // Watts
    bias_power: 250.0,        // Watts
    pressure: 10.0,           // mTorr
    temperature: 20.0,        // Celsius
    cf4_flow: 50.0,          // sccm
    o2_flow: 10.0,           // sccm
    ar_flow: 200.0           // sccm
};

setProcessParameters(&reactor, params);
                        

3. igniteP lasma()

Initiates plasma ignition sequence with controlled power ramp to reach stable discharge. Monitors impedance and ensures proper coupling.

Parameters

4. runEtchProcess()

Executes complete etching process on substrate for specified duration. Monitors endpoint, uniformity, and process stability.

Parameters

5. shutdownReactor()

Safely shuts down reactor with optional cleaning and purge sequences.

Parameters

6. getReactorStatus()

Retrieves current reactor operational status and health metrics.

7. calibrateEndpoint()

Calibrates optical emission spectroscopy (OES) or interferometry for endpoint detection.

Parameters

8. exportRecipe()

Exports current process recipe to file for equipment transfer or documentation.

Parameters

9. calculatePlasmaFrequency()

Computes plasma frequency from electron density using ω_pe = √(n_e * e^2 / (ε_0 * m_e)).

Parameters

double ne = 1e11;  // 10^11 cm^-3
double omega_pe = calculatePlasmaFrequency(ne);
printf("Plasma frequency: %.2e rad/s\n", omega_pe);
// Output: Plasma frequency: 5.64e10 rad/s
                        

10. calculateDebyeLength()

Computes Debye screening length: λ_D = √(ε_0 * k_B * T_e / (n_e * e^2)).

Parameters

11. calculateSheathVoltage()

Estimates sheath voltage drop based on electron temperature and Bohm criterion.

Parameters

12. calculateSheathThickness()

Computes sheath thickness using Child-Langmuir formulation: s = λ_D * (2/3) * (2 * e * V_s / (k_B * T_e))^(3/4).

Parameters

13. calculatePowerAbsorption()

Calculates absorbed power density in plasma accounting for coupling losses.

Parameters

14. calculateEEDF()

Computes electron energy distribution function assuming Maxwellian or Druyvesteyn distribution.

Parameters

15. calculateCollisionFrequency()

Computes electron-neutral collision frequency: ν_c = n_g * σ_c * v_e.

Parameters

16. calculateIonizationRate()

Computes ionization rate using temperature-dependent rate coefficients: R_ion = n_e * n_g * k_ion(T_e).

Parameters

17. calculateDissociationRate()

Computes dissociation rate: R_diss = n_e * n_mol * k_diss(T_e).

Parameters

18. calculateRadicalProduction()

Estimates radical production rate from power: R_rad = α * P_abs / (E_diss * V).

Parameters

19. solveChemicalKinetics()

Solves time-dependent chemical kinetics using stiff ODE solver for plasma chemistry network.

Parameters

20. calculateFCRatio()

Computes effective F/C ratio in fluorocarbon plasmas accounting for dissociation and oxygen addition.

Parameters

21. calculatePolymerizationRate()

Computes polymer formation rate: R_poly = k_poly * [CF_x] * [sites].

Parameters

22. loadReactionDatabase()

Loads chemical reaction database from file with rate constants and cross-sections.

Parameters

23. calculateOxygenEffect()

Computes oxygen scavenging effect on F/C ratio: (F/C)_eff = (F/C)_base + k_O * [O]/[CF_x].

Parameters

24. calculateChargeTransfer()

Computes charge transfer reaction rate: A^+ + B → A + B^+.

Parameters

25. calculateDiffusionCoefficient()

Computes diffusion coefficient: D = (1/3) * v_th * λ_mfp.

Parameters

26. calculateNeutralFlux()

Computes neutral flux: Γ_n = -D * ∇n + n * v_gas.

Parameters

27. calculateIonEnergy()

Computes ion energy at substrate: E_i = (1/2) * m_i * v_i^2 + e * V_s.

Parameters

28. calculateIonFlux()

Computes ion flux: Γ_i = (1/4) * n_i * √(8 * k_B * T_i / (π * m_i)).

Parameters

29. calculateAngularSpread()

Computes RMS angular spread: θ_rms = √(2 * k_B * T_i / E_i).

Parameters

30. calculateResidenceTime()

Computes gas residence time: τ_res = V / Q_pump.

Parameters

31. calculateLangmuirCoverage()

Computes surface coverage: θ = (K * P) / (1 + K * P).

Parameters

32. calculateAdsorptionRate()

Computes adsorption rate: R_ads = S * Γ * (1 - θ).

Parameters

33. calculateEtchRate()

Computes total etch rate: ER_total = ER_chem + ER_phys + ER_ion-enh.

Parameters

34. calculateSputterYield()

Computes sputter yield: Y(E,θ) = Y_norm(E) * [cos(θ)]^(-f).

Parameters

35. calculateDesorptionRate()

Computes thermal desorption rate: R_des = ν * θ * exp(-E_des / (k_B * T)).

Parameters

36. calculateIonEnhancedDesorption()

Computes ion-enhanced desorption: R_des,ion = σ_des * Γ_i * θ.

Parameters

37. calculateWaferTemperature()

Solves wafer thermal balance: P_ion + P_rec = P_cond + P_rad.

Parameters

38. calculateArrheniusRate()

Computes temperature-dependent rate: k(T) = A * exp(-E_a / (k_B * T)).

Parameters

39. calculateLocalEtchRate()

Computes local etch rate: v_n = f(Γ_i, Γ_n, E_i, θ) / ρ.

Parameters

40. evolveProfile()

Evolves feature profile using level-set or string method: ∂r/∂t = v_n * n̂.

Parameters

41. calculateARDEFactor()

Computes ARDE factor: ER(AR) = ER_0 * F_n(AR) * F_i(AR) * F_c(AR).

Parameters

42. calculateSurfacePotential()

Solves surface charging: dV_s/dt = (Γ_i - Γ_e) * e / C_s.

Parameters

43. calculateIonDeflection()

Computes ion deflection angle: Δθ = (e * V_s * L) / (2 * E_i * d).

Parameters

44. calculateMicroloading()

Computes microloading effect: ER_local = ER_iso / (1 + α * ρ_local).

Parameters

45. calculateSelectivity()

Computes etch selectivity: S = ER_target / ER_mask.

Parameters

46. analyzeUniformity()

Analyzes etch uniformity across wafer with statistical metrics.

Parameters

47. detectEndpoint()

Detects etch endpoint using OES and/or interferometry signals.

Parameters

48. generateProcessReport()

Generates comprehensive process report with all metrics and diagnostics.

Parameters

49. optimizeRecipe()

Uses machine learning optimization to find optimal process parameters.

Parameters

50. runSensitivityAnalysis()

Performs DOE sensitivity analysis of process parameters on etch metrics.

Parameters