Plasma Etching

Comprehensive modeling and simulation of reactive ion etching (RIE), deep reactive ion etching (DRIE), and atomic layer etching (ALE) for advanced semiconductor manufacturing

1-1000 nm/min
Etch Rate Range
>90:1
Selectivity Achieved
0.1-10 mTorr
Pressure Range
>100:1
Aspect Ratio

Interactive Demonstrations

Process Tools

Documentation