← Back to Etching Process Complete Project

Etching Recipe Generator

Step-by-step wizard to generate optimized etching recipes. Input material stack, feature dimensions, and selectivity requirements. The system automatically generates process parameters, selects optimal chemistry, and provides safety checks.

1
Material Stack
2
Feature Dimensions
3
Selectivity
4
Chemistry
5
Equipment
6
Process Parameters
7
Review & Export

Define Material Stack

Define the material layers from top to bottom. The etching recipe will be optimized for the target material.
Layer 1 (Top):
Thickness: nm
Layer 2 (Target):
Thickness: nm
Layer 3 (Stop):
Thickness: nm

Feature Dimensions & Geometry

Specify the critical dimensions and geometry of features to be etched.
Minimum feature width or diameter
Required etch depth into target material
Automatically calculated
90° = vertical, <90° = tapered
Allowable CD variation across wafer
Allowable depth variation across wafer
Unusable wafer edge width
RMS roughness specification
LER/LWR specification

Selectivity & Material Requirements

Define selectivity requirements to mask and stop layers, plus acceptable damage levels.
Minimum required selectivity to mask
Minimum required selectivity to stop layer
% additional time after endpoint
Maximum allowable mask loss
Acceptable subsurface damage

Select Etch Chemistry

Choose the etch chemistry based on your material and requirements. The system recommends optimal chemistry.

CF₄/O₂ (Fluorocarbon)

Best for: Silicon, polysilicon, silicon nitride

Advantages: High etch rate, good selectivity, excellent anisotropy

Considerations: Polymer deposition, requires O₂ balance

SF₆/O₂ (Sulfur Hexafluoride)

Best for: Deep silicon etching (DRIE), MEMS

Advantages: Very high etch rate, deep feature capability

Considerations: Lower selectivity, isotropic tendency

Cl₂/BCl₃ (Chlorine-based)

Best for: III-V semiconductors (GaAs, InP), polysilicon

Advantages: High selectivity, low damage, smooth sidewalls

Considerations: Corrosive, moisture sensitive

HBr/O₂ (Hydrogen Bromide)

Best for: Polysilicon gates, silicon etching

Advantages: Excellent selectivity to oxide, low damage

Considerations: Slower than fluorine, passivation needed

C₄F₈/SF₆ (Bosch Process)

Best for: High aspect ratio silicon (DRIE)

Advantages: Vertical sidewalls, deep etching, scallop control

Considerations: Pulsed process, longer time

CHF₃/CF₄ (Hydrofluorocarbon)

Best for: SiO₂ etching, oxide patterning

Advantages: High oxide selectivity, polymer formation

Considerations: Lower etch rate, polymer residue

Carrier or diluent gases for process tuning

Equipment Configuration

Configure equipment settings and capabilities for your etching system.

Process Control Options

Auto-Generated Process Parameters

Process parameters have been automatically calculated based on your inputs. You can fine-tune them if needed.

Recommended Process Recipe

Auto-calculated optimal pressure
ICP/source power for plasma generation
Substrate bias for ion acceleration
CF₄ flow rate
O₂ flow rate
Ar or other carrier gas
Wafer/chuck temperature
Based on etch rate calculation
Plasma stabilization before etch
Additional time after endpoint

Safety Checks

Review & Export Recipe

Review the complete recipe and export it for use in your etching tool.

Complete Recipe Summary

Preview Charts

Live Preview

Configure parameters to see live preview...