Capacitance-Voltage Profiling

Doping concentration, interface traps, and oxide characterization

MOS Capacitor
P-N Junction
Doping Profile
Interface Traps

MOS Parameters

100 kHz

Extracted Parameters

34.5
Cox (pF)
-0.85
Vfb (V)
0.65
Vth (V)
0.32
Wd,max (µm)
8.2
Cmin (pF)
10.1
tox (nm)

High-Frequency C-V Curve

Junction Parameters

Junction Theory

Abrupt Junction: C ∝ (Vbi - V)-1/2

Linear Graded: C ∝ (Vbi - V)-1/3

Hyperabrupt: C ∝ (Vbi - V)-n, n > 0.5

1/C² vs V plot yields doping concentration from slope.

C-V Characteristic

1/C² vs V

C-V Data Input

Profile Statistics

1.0e18
Peak (cm⁻³)
0.50
xj (µm)
0.15
Rp (µm)
5.2e13
Dose (cm⁻²)

Doping Profile

Dit Extraction

Interface Quality Metrics

2.5e11
Dit at midgap
4.0e10
Qit (cm⁻²)
25
ΔVfb (mV)
1.2e10
Border Traps

Multi-Frequency C-V

Dit vs Energy