Spectroscopic Ellipsometry
Non-destructive optical characterization for thin film thickness, refractive index, and optical constants determination in semiconductor manufacturing.
Film Parameters
100 nm
70°
Fitted Parameters
Thickness:
100.2 ± 0.3 nm
n @ 632.8 nm:
1.465
k @ 632.8 nm:
0.000
MSE:
0.85
Excellent fit quality (MSE < 2)
Ellipsometric Parameters (Ψ, Δ)
100.2
Thickness (nm)
1.465
n @ 632.8nm
±0.3%
Uniformity
0.85
MSE
Layer Stack
Layer 1: HfO₂
2.5 nm
Layer 2: SiO₂
0.8 nm
Substrate: Si
Crystalline
2.5 nm
0.8 nm
Fitted Stack
HfO₂:
2.52 ± 0.08 nm
SiO₂:
0.82 ± 0.05 nm
EOT:
1.12 nm
Multi-Layer Ellipsometry
3.3
Total Stack (nm)
1.12
EOT (nm)
1.2
MSE
0.85
Correlation
Optical Model
Cauchy Parameters
1.46
0.35
0.00
Optical Constants (n, k)
1.457
n @ 633 nm
0.000
k @ 633 nm
8.9
Band Gap (eV)
3
Free Parameters
Mapping Setup
3 mm
Statistics
Mean:
100.2 nm
Std Dev:
0.85 nm
Range:
3.2 nm
%Uniformity:
±0.85%
Thickness Map
98.5
Min (nm)
101.7
Max (nm)
0.85%
1σ Uniformity
49
Points Measured