FTIR Spectroscopy

Fourier Transform Infrared Spectroscopy for molecular vibration analysis, chemical identification, and thin film characterization in semiconductor materials.

Sample Configuration

Material Type

Film Thickness (nm)

500 nm

Spectral Resolution (cm⁻¹)

Number of Scans

64 scans

Display Mode

Peak Assignments

Si-O-Si stretch at ~1080 cm⁻¹, Si-O bending at ~810 cm⁻¹

FTIR Transmission Spectrum

1080

Main Peak (cm⁻¹)

45.2

Peak Intensity (%)

FWHM (cm⁻¹)

1250

Signal/Noise

ATR Configuration

ATR Crystal

Incident Angle (°)

45°

Sample Material

Number of Bounces

Pressure Applied

60%

Penetration Depth

Effective penetration: 1.2 μm at 1000 cm⁻¹

ATR-FTIR Spectrum

1.2

Depth (μm)

0.8

Evanescent Field

Good

Contact Quality

38.7

Critical Angle (°)

Library Search

Search Mode

Spectral Range (cm⁻¹)

Reference Library

Semiconductors

Polymers

Organics

Contaminants

Match Threshold (%)

85%

Match	Material	Score
1	SiO₂ (TEOS)	96.2%
2	SiO₂ (Thermal)	94.8%
3	PSG	87.3%

Sample vs Reference Comparison

96.2

Best Match (%)

8/9

Peaks Matched

High

Confidence

1247

References Searched

Quantitative Setup

Analysis Method

Target Analyte

Peak Position (cm⁻¹)

Integration Range (cm⁻¹)

Baseline Correction

Concentration Result

Interstitial Oxygen: 8.2 × 10¹⁷ atoms/cm³

Using ASTM F1188 calibration

Quantitative Analysis

12.4

Integrated Area

8.2E17

Concentration

0.9987

Calibration R²

5E15

LOD (atoms/cm³)