Hall Effect Characterization

Carrier concentration, mobility, and resistivity measurements

Van der Pauw
Hall Bar
Temperature Dependence
Mobility Mapping

Measurement Parameters

0.5 T

Sample Configuration

1 2 3 4 Sample B

Van der Pauw configuration with 4 corner contacts

Calculated Results

2.5e16
Carrier Conc. (cm⁻³)
450
Mobility (cm²/V·s)
0.125
Resistivity (Ω·cm)
-250
Hall Coeff. (cm³/C)
n-type (electrons)

Hall Voltage vs Magnetic Field

Hall Bar Geometry

Hall Bar Structure

V₁ V₂ V₃ I+ I-

Magnetoresistance

Temperature Range

Temperature Effects

  • Freeze-out region (low T): carriers trapped at dopant sites
  • Extrinsic region: all dopants ionized, n ≈ ND
  • Intrinsic region (high T): thermal generation dominates
  • Mobility limited by phonon scattering at high T
  • Mobility limited by ionized impurity scattering at low T

Carrier Concentration vs Temperature

Mobility vs Temperature

Wafer Mobility Mapping

Mobility Map

Distribution

Statistics

485
Mean (cm²/V·s)
12.3
Std Dev
458
Min
512
Max
2.5
Uniformity (%)