Photoluminescence Spectroscopy

Non-destructive optical characterization for semiconductor band structure, defect analysis, and quantum dot/well emission studies.

Measurement Setup

Sample Material

Excitation Wavelength (nm)

Excitation Power (mW)

10 mW

Temperature (K)

300 K

Doping Type

Detected Peaks

870 nm Band Edge (1.42 eV)

Photoluminescence Spectrum

400 nm (UV) 550 nm (Green) 700 nm (Red) 900 nm (NIR)

870

Peak λ (nm)

1.42

Energy (eV)

FWHM (meV)

8.5E4

Intensity (a.u.)

Temperature Study

Material

Temperature Range

Temperature Step (K)

20 K

Display Mode

Varshni Parameters

Eg(T) = Eg(0) - αT²/(T + β)

Eg(0) = 1.519 eV
α = 5.4×10⁻⁴ eV/K
β = 204 K

Temperature-Dependent PL

1.519

Eg(0) (eV)

1.424

Eg(300K) (eV)

Redshift (meV)

10³

Quenching Factor

Power Dependence

Sample Type

Power Range

Number of Points

Y-Axis Scale

Power Law Fit

I_PL ∝ P^k

k < 1: Free-to-bound/DAP
k = 1: Excitonic
k = 2: Free carrier
k > 2: Auger recombination

Power Dependence Analysis

1.02

Exponent k

0.998

R² Value

Excitonic

Mechanism

Saturation

TRPL Setup

Sample Type

Laser Rep Rate (MHz)

Time Range (ns)

100 ns

Detection Wavelength (nm)

Fit Model

Fitted Lifetimes

τ₁ = 2.5 ns (85%)
τ₂ = 15.2 ns (15%)
τ_avg = 4.4 ns

Time-Resolved PL Decay

2.5

τ₁ (ns)

15.2

τ₂ (ns)

4.4

τ_avg (ns)

1.05

χ² (fit)