Raman Spectroscopy

Non-destructive vibrational spectroscopy for crystallinity analysis, stress measurement, and phase identification in semiconductor materials.

Sample Configuration

Silicon Type

Laser Wavelength (nm)

Laser Power (mW)

5.0 mW

Integration Time (s)

10 s

Crystallite Size (nm)

50 nm

Peak Assignments

520 cm⁻¹: LO-TO phonon (c-Si)
480 cm⁻¹: TO-like (a-Si)
300 cm⁻¹: 2TA overtone

Raman Spectrum

520.5

Peak (cm⁻¹)

4.2

FWHM (cm⁻¹)

98%

Crystallinity

Excellent

Crystal Quality

Stress Analysis

Sample Structure

Applied Stress (MPa)

0 MPa

Stress Type

Reference Position (cm⁻¹)

Stress Calculation

σ = -Δω × K
K (biaxial) = 250 MPa/cm⁻¹
K (uniaxial) = 435 MPa/cm⁻¹

Stress-Induced Peak Shift

520.5

Peak (cm⁻¹)

0.0

Shift (cm⁻¹)

Stress (MPa)

0.000%

Strain

2D Material Analysis

Material

Number of Layers

Doping Level

Defect Density

Mode	Position	Intensity
G	1582 cm⁻¹	Strong
2D	2680 cm⁻¹	Strong
D	1350 cm⁻¹	Weak

2D Material Raman Spectrum

1.0

I(2D)/I(G)

0.05

I(D)/I(G)

High

Quality

Layers

Mapping Setup

Sample Type

Map Size (μm)

Step Size (μm)

Display Parameter

Map Statistics

Mean: 520.3 cm⁻¹
Std Dev: 0.15 cm⁻¹
Range: 0.8 cm⁻¹
Points: 2500

Raman Map

520.3

Mean

0.15

Std Dev

±0.03%

Uniformity

2500

Points