X-Ray Diffraction Analysis
Comprehensive structural characterization including phase identification, crystallite size, lattice strain, and epitaxial film analysis for semiconductor materials.
Sample Configuration
50 nm
5
| hkl | 2θ (°) | d (Å) | I (%) |
|---|
X-Ray Diffraction Pattern
5.431
Lattice (Å)
50
Crystal Size (nm)
0.05%
Microstrain
Cubic
Crystal System
Epitaxial Film Analysis
x = 0.30
100 nm
Strain Analysis
ε⊥ = +0.42%
ε∥ = -0.21%
Relaxation = 0%
High-Resolution ω-2θ Scan
1250
Peak Sep (arcsec)
30%
Composition
45
FWHM (arcsec)
Good
Crystal Quality
RSM Configuration
20%
x = 0.25
Lattice Parameters
a∥ = 5.431 Å
a⊥ = 5.475 Å
arelaxed = 5.468 Å
Reciprocal Space Map
20%
Relaxation
0.02°
Layer Tilt
1.0%
Mismatch
0.05°
Mosaic Spread
Rocking Curve Setup
±1000
Crystal Quality
FWHM indicates excellent crystal quality with low defect density.
ω Rocking Curve
12
FWHM (arcsec)
1E6
Peak Intensity
10⁴
Disloc. (/cm²)
A
Quality Grade