Vertical GaN Device Physics Simulator
Material Parameters
Device Structure
Band Diagram & 2-DEG Formation
Carrier Concentration Profile
Electric Field Distribution
Device Characteristics
Key Physics Equations
2-DEG Sheet Charge Density:
\[ n_s = \frac{\sigma_{pol}}{q} - \frac{\epsilon_0 \epsilon_r}{q d_{AlGaN}}(V_{GS} - V_{th}) \]Polarization Charge:
\[ \sigma_{pol} = P_{sp}(AlGaN) - P_{sp}(GaN) + P_{pz}(AlGaN) \]Breakdown Voltage (Vertical):
\[ V_{BR} = \frac{\epsilon_s E_c^2}{2qN_D} \]Understanding Vertical GaN Device Physics
This simulator demonstrates the fundamental physics of vertical GaN power devices. The key innovation lies in the vertical current flow through a thick drift region, which allows for much higher breakdown voltages compared to lateral devices. The 2-DEG at the AlGaN/GaN interface provides the high-mobility channel for current conduction, while the vertical drift region handles the high voltage.
Adjust the parameters above to see how material composition, layer thickness, and bias conditions affect the band structure, carrier concentration, and device performance. Notice how the AlGaN composition affects the 2-DEG density through polarization charge, and how the drift layer thickness impacts the breakdown voltage.