Lateral vs Vertical GaN Performance Analysis
Operating Conditions
600 V
100 A/cm²
1.0 MHz
100 °C
Lateral GaN (E-mode)
Max Voltage
650 V
Ron,sp
1.2 mΩ·cm²
Power Loss
12.5 W
Efficiency
98.5%
Thermal Resistance
2.5 K/W
Vertical GaN
Max Voltage
1200 V
Ron,sp
0.85 mΩ·cm²
Power Loss
8.2 W
Efficiency
99.1%
Thermal Resistance
1.2 K/W
Ron vs Breakdown Voltage Trade-off
Switching Loss Comparison
Figure of Merit Comparison
Temperature-Dependent Performance
Key Performance Differences
Vertical GaN Advantages: Higher breakdown voltage capability (>1.2kV), better thermal management through substrate cooling, higher current density handling, and superior performance at high voltages.
Lateral GaN Advantages: Lower cost due to GaN-on-Si technology, mature manufacturing process, excellent performance for sub-1kV applications, and easier integration with silicon drivers.