Vertical GaN Thermal Analysis

Device Parameters

25 W
9 mm²
300 μm
25 °C

Cooling Configuration

25 μm
1000 W/m²K

3D Temperature Distribution

Heat Flow Patterns

Thermal Resistance Network

Transient Thermal Response

Thermal Performance Metrics

125
Junction Temp (°C)
2.5
Total Rth (K/W)
50
Thermal Margin (°C)
35
Max Gradient (K/mm)

Thermal Advantages of Vertical GaN

Vertical GaN devices offer superior thermal performance compared to lateral architectures. The key advantage is heat dissipation through the GaN substrate, providing a direct thermal path to the heat sink. This eliminates the thermal bottleneck present in lateral devices where heat must flow through insulating layers.

The 3D current flow in vertical devices also distributes heat generation more uniformly throughout the device volume, reducing hot spots and improving reliability. Combined with advanced packaging techniques, vertical GaN can achieve junction-to-case thermal resistances below 0.5 K/W.