Electric Field Distribution in Vertical GaN
Device Parameters
Edge Termination
2D Electric Field Distribution
Vertical Electric Field Profile
Field Enhancement at Edges
Breakdown Voltage vs Design Parameters
Field Analysis Results
Electric Field Physics
Poisson's Equation:
\[ \nabla \cdot \vec{E} = \frac{\rho}{\epsilon} = \frac{q(N_D - N_A)}{\epsilon} \]Critical Field for GaN:
\[ E_c = 3.3 \times 10^6 \text{ V/cm} \]Impact Ionization Rate:
\[ \alpha = a \exp\left(-\frac{b}{E}\right) \]Electric Field Management in Vertical GaN
Vertical GaN devices excel in electric field management due to their inherent structure. The vertical drift region allows for uniform field distribution, avoiding the surface field crowding issues common in lateral devices. Advanced edge termination techniques further optimize the field profile, enabling operation closer to the theoretical limits.
The simulator shows how different termination strategies affect field distribution and breakdown voltage. Notice how proper edge termination can reduce peak fields by 30-40%, significantly improving device reliability and allowing higher voltage operation.