Advanced Technologies & Research

Graduate device research, undergraduate quantum optics, and independent projects

Graduate Device Research (UConn)

AlGaN/GaN HEMT Electrothermal TCAD Modeling

Built coupled electrothermal TCAD models of AlGaN/GaN HEMTs to characterize self-heating, junction temperature behavior, and DC/RF performance trade-offs across bias conditions. Calibrated material parameters, mesh strategy, and contact models against published device data.

Wide Bandgap Device Physics

Wide bandgap device physics, electrothermal modeling, self-heating behavior, and the connection between device-level findings and process integration, reliability, and yield. Includes work on vertical GaN power devices in the lab.

Memristive Devices

Worked with memristive devices in the lab, including device characterization and basic crossbar array configurations.

Full Graduate Research Detail

Lithography Modeling

DUV Energy Deposition: Monte Carlo vs Double Gaussian

Applied model-comparison study for EUV/DUV lithography. Benchmarks aerial-image energy deposition predicted by a Double-Gaussian PSF (FFT convolution) against a Monte Carlo particle model. Includes partial-coherence modeling, flare analysis, and swing curves.

Full DUV Project Detail

Photonics

Silicon Photonics Transceiver Simulation

25 to 50 Gbps silicon photonics transceiver simulation framework using Lumerical-style modeling. Compact model development, link budget analysis, and process variation sensitivity.

RF & Microwave Engineering

mmWave RF Frontend (28 GHz, 5G NR)

Complete 28 GHz millimeter-wave frontend design covering GaN power amplifier, low-noise amplifier, 8×8 phased-array beamforming, digital predistortion, and adaptive impedance matching. S-parameter analysis, load-pull, and thermal management tied back to the GaN HEMT TCAD work above.

GaN Power Amplifier with Doherty + DPD

RF power amplifier design for 5G/6G mmWave using GaN HEMT devices (0.15 μm process) in a 2:1 asymmetric Doherty architecture, linearized with memory-polynomial digital predistortion. Design targets: 43 dBm P1dB, 65% peak PAE, 400 MHz instantaneous bandwidth, ACPR −48 dBc with DPD enabled, EVM 1.8% on 256-QAM.

HEMT Electrothermal → RF Performance Trade-offs

Bridge between the AlGaN/GaN HEMT TCAD work and system-level RF design. Self-heating shifts I–V curves, moves fT/fmax, and degrades linearity at high drive levels — setting the scope for how thermal management feeds back into PA architecture choice and DPD coefficient drift.

Full mmWave Frontend Project

Quantum Optics & EIT (Undergraduate Research)

Electromagnetically Induced Transparency for Slow Light

Experimental and theoretical research on Electromagnetically Induced Transparency (EIT) in atomic systems for slow light demonstrations. Conducted as undergraduate research at UConn.

Quantum Memory Demonstrations

Undergraduate research on quantum memory demonstrations using EIT-based protocols in atomic systems.

Computational Methods

Monte Carlo Simulation

Monte Carlo simulation across two contexts: photon transport modeling for the DUV energy deposition project, and molecular beam simulations from undergraduate research.

Tools & Software

Device Simulation

Sentaurus TCAD Silvaco TCAD

Photonics

Lumerical-style modeling Compact model development Link budget analysis

RF & Microwave

GaN HEMT (RF) mmWave / 28 GHz 5G NR (n257) Phased-array beamforming Doherty PA architecture Digital predistortion (DPD) Memory-polynomial DPD S-parameter analysis Load-pull Smith chart Link-level RF metrics (PAE, ACPR, EVM) LNA design Adaptive impedance matching Thermal management for RF PAs

Programming & Numerical

Python MATLAB Monte Carlo methods FFT convolution LaTeX

Where the Related Depth Lives on This Site

  • Graduate research detail: the AlGaN/GaN HEMT TCAD work, the memristive device work, and full UConn lab role context. View page.
  • DUV energy deposition project: the full Monte Carlo vs Double Gaussian model-comparison study with implementation detail. View page.
  • Semiconductor process and equipment skills: ASML production-floor work and the rest of the semiconductor stack. View page.
  • Undergraduate research role: the EIT and quantum memory work in role-page form. View page.